Product Summary

The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.

Parametrics

VRF2933 absolute maximum ratings: (1)Drain-Source Voltage:160V; (2)Drain-Gate Voltage:160V; (3)Continuous Drain Current @ TC = 25°C:40A; (4)Gate-Source Voltage:±40V; (5)Total Device Dissipation @ TC = 25°C:648W; (6)Storage Temperature Range:-65 to 150℃; (7)Operating Junction Temperature:200℃.

Features

VRF2933 features: (1)3:1 Load VSWR Capability at Specified Operating Conditions; (2)Nitride Passivated; (3)Refractory Gold Metallization; (4)300W with 20dB Min. Gain @ 30MHz, 50V; (5)Excellent Stability & Low IMD; (6)Common Source Configuration.

Diagrams

VRF2933 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
VRF2933
VRF2933

MOSFET RF PWR N-CH 50V 300W M177
Data Sheet
0-1: $69.22
1-10: $64.89
10-100: $58.40
100-250: $56.24
250-500: $55.16
500-1000: $52.78
1000-2500: $51.91
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
VRF2933
VRF2933

MOSFET RF PWR N-CH 50V 300W M177
Data Sheet
0-1: $69.22
1-10: $64.89
10-100: $58.40
100-250: $56.24
250-500: $55.16
500-1000: $52.78
1000-2500: $51.91