Product Summary

The MRF377H is a RF Power Field-Effect Transistor, which is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of MRF377H make it ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.

Parametrics

MRF377H absolute maximum ratings: (1)drain-source voltage: -0.5 to +65 V; (2)gate-source voltage: -0.5 to +65 V; (3)drain current-continous: 17 A; (4)total device dissipation @ Tc=25℃: 648 W, derate above 25℃: 3.7 W/℃; (5)storage temperature range: -65 to +150 ℃; (6)operating junction temperature: 200 ℃.

Features

MRF377H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Device Designed for Push-Pull Operation Only; (4)Integrated ESD Protection; (5)Excellent Thermal Stability; (6)Lower Thermal Resistance Package; (7)Low Gold Plating Thickness on Leads, 40μ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF377H block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF377H
MRF377H

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