Product Summary

The MRF372 is a Power Field Effect Transistor designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of the MRF372 makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

Parametrics

MRF372 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 68 Vdc; (2)Gate–Source Voltage VGS: -0.5, +15 Vdc; (3)Drain Current – Continuous ID: 17 Adc; (4)Storage Temperature Range Tstg: – 65 to +150 ℃; (5)Operating Junction Temperature TJ: 200 ℃.

Features

MRF372 features: (1)Typical Narrowband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts; (2)Output Power -180 Watts PEP; (3)Power Gain -17 dB; (4)Efficiency -36%; (5)IMD - -35 dBc; (6)Typical Broadband Two-Tone Performance @ f1 = 857 MHz,; (7)f2 = 863 MHz, 32 Volts; (8)Output Power -180 Watts PEP; (9)Power Gain -14.5 dB; (10)Efficiency -37%; (11)IMD - -31 dBc; (12)Internally Matched, Controlled Q, for Ease of Use; (13)Integrated ESD Protection; (14)100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP; (15)Excellent Thermal Stability; (16)Characterized with Series Equivalent Large-Signal Impedance Parameters.

Diagrams

MRF372 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF372
MRF372

Other


Data Sheet

Negotiable 
MRF372R3
MRF372R3

Freescale Semiconductor

Transistors RF MOSFET Power 180W 860MHZ NI-860MOD

Data Sheet

Negotiable 
MRF372R5
MRF372R5

Freescale Semiconductor

Transistors RF MOSFET Power 180W 860MHZ NI-860MOD

Data Sheet

Negotiable